Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
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Science China Press., Co. Ltd.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Cu/P-type GaN triboelectric nanogenerator with power density over 100 W/m2;Applied Physics Letters;2022-02-28
2. AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application;Crystal Research and Technology;2021-10-07
3. Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers;OPT APPL;2019
4. Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool;Japanese Journal of Applied Physics;2013-08-01
5. High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system;Journal of Crystal Growth;2013-05
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