Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor-Reference-Cited by-同舟云学术

Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor

Published:2023-06-01 Issue: Volume: Page:20220060
ISSN:2097-1168
Container-title:National Science Open
language:en
Short-container-title:NSO

Author:

Huang Zhiheng,Li Yuhui,Bo Tao,Zhao Yanchong,Wu Fanfan,Li Lu,Yuan Yalong,Ji Yiru,Liu Le,Tian Jinpeng,Chu Yanbang,Zan Xiaozhou,Peng Yalin,Li Xiuzhen,Zhang Yangkun,Watanabe Kenji,Taniguchi Takashi,Sun Zhipei,Yang Wei,Shi Dongxia,Du Shixuan,Du Luojun,Zhang Guangyu

Publisher

Science China Press., Co. Ltd.

Link

https://engine.scichina.com/doi/pdf/370A302CF2F345C98A9A9001D1BF2B3C

Reference45 articles.

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4. Wu S, Buckley S, Schaibley JR. Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature, 2015, 520: 69-72.

5. Baugher BWH, Churchill HOH, Yang Y. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat Nanotech, 2014, 9: 262-267.

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