The theoretical studies of piezoresistive effect in diamond films
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Mathematics
Link
https://link.springer.com/content/pdf/10.1360/02ys9012.pdf
Reference13 articles.
1. Jiang, X., Schiffmann, K., Klages, C. P., Nucleation and initial growth phase of diamond thin films on (100) silicon, Phys. Rev., 1994, B50 (12): 8402–8410.
2. Jiang, X., Klages, C. P., Zachai, R. et al., Epitaxial diamond thin films on (100) silicon substrate, Appl. Phys. Lett., 1993, 62 (26): 3438–3440.
3. Deguchi, M., Kitabatake, M., Hirao, T. et al., PR properties of chemical-vapor-deposited p-type diamond strain-gauges fabricared on diaphragm structure, Diamond Relat. Mater., 1996,5: 728–731.
4. Wang, W. L., Liao, K. J., Feng, B. et al., PR of p-type heteroepitaxial diamond films on Si(100), Diamond Relat. Matet., 1998, 7: 528–532.
5. Wang, W. L., Jiang, X., Taube, K. et a1., PR of polycrystalline p-type diamond films of various doping levels at different temperatures, J. Appl. Phys., 1997, 82 (2): 729–732.
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