Multi-scale study of electronic and thermal transport properties for the Cu/diamond interface
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Publisher
Science China Press., Co. Ltd.
Link
https://engine.scichina.com/doi/pdf/FA21168174A1414A88E20C97354A6901
Reference52 articles.
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2. Russell S A O, Sharabi S, Tallaire A. Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz. IEEE Electron Device Lett, 2012, 33: 1471-1473.
3. Sato H, Kasu M. Maximum hole concentration for hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2. Diamond Relat Mater, 2013, 31: 47-49.
4. Yang Y, Koeck F A, Dutta M. Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity. J Appl Phys, 2017, 122:
5. O’Donnell K M, Edmonds M T, Ristein J. Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement. Adv Funct Mater, 2013, 23: 5608-5614.
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