Response of copper nanowires in dynamic tensile deformation

Author:

Liang W1,Zhou M1

Affiliation:

1. Georgia Institute of Technology The Woodruff School of Mechanical Engineering Atlanta, Georgia, USA

Abstract

Molecular dynamics (MD) simulations with an embedded atom method (EAM) potential are carried out to analyse the size and strain rate effects in the tensile deformation of single-crystal copper nanowires. The cross-sections of the wires are squares with dimensions of between 5 and 20 lattice constants (or 1.8-7.2nm). Deformations under constant strain rates between 1.67 × 107 and 1.67 × 1010s−1 are analysed. It is found that the yield stress decreases with specimen size and increases with loading rate. On the other hand, ductility increases with specimen size and strain rate. The influence of specimen size is due to enhanced opportunities for dislocation motion at larger sizes. The influence of strain rate is due to the dynamic wave effect or phonon drag which impedes the motion of dislocations. The analysis also focuses on the variation in deformation mechanisms with specimen size and strain rate. Slip along alternating (111) planes is observed in small wires, while multiple cross-slips are primarily responsible for the progression of plastic deformation in larger wires. As strain rate is increased, a transition of the deformation mechanism from sequential propagation of slip along well-defined and favourably oriented slip planes to cross-slip, and then to amorphization, is observed.

Publisher

SAGE Publications

Subject

Mechanical Engineering

Cited by 85 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3