Hercules: Enabling Atomic Durability for Persistent Memory with Transient Persistence Domain

Author:

Ye Chongnan1,Chen Meng1,Jiang Qisheng1,Wang Chundong1

Affiliation:

1. School of Information Science and Technology, ShanghaiTech University, China and Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, China

Abstract

Persistent memory (pmem) products bring the persistence domain up to the memory level. Intel recently introduced the eADR feature that guarantees to flush data buffered in CPU cache to pmem on a power outage, thereby making the CPU cache a transient persistence domain . Researchers have explored how to enable the atomic durability for applications’ in-pmem data. In this paper, we exploit the eADR-supported CPU cache to do so. A modified cache line, until written back to pmem, is a natural redo log copy of the in-pmem data. However, a write-back due to cache replacement or eADR on a crash overwrites the original copy. We accordingly develop Hercules, a hardware logging design for the transaction-level atomic durability, with supportive components installed in CPU cache, memory controller (MC), and pmem. When a transaction commits, Hercules commits on-chip its data staying in cache lines. For cache lines evicted before the commit, Hercules asks the MC to redirect and persist them into in-pmem log entries and commits them off-chip upon committing the transaction. Hercules lazily conducts pmem writes only for cache replacements at runtime. On a crash, Hercules saves metadata and data for active transactions into pmem for recovery. Experiments show that, by using CPU cache for both buffering and logging, Hercules yields much higher throughput and incurs significantly fewer pmem writes than state-of-the-art designs.

Publisher

Association for Computing Machinery (ACM)

Subject

Hardware and Architecture,Software

Reference109 articles.

1. SK Hynix. SK Hynix developed the world’s highest density 16GB NVDIMM. https://news.skhynix.com/sk-hynix-developed-the-worlds-highest-density-16gb-nvdimm/ , October 2014 . Accessed : 06-15-2022. SK Hynix. SK Hynix developed the world’s highest density 16GB NVDIMM. https://news.skhynix.com/sk-hynix-developed-the-worlds-highest-density-16gb-nvdimm/, October 2014. Accessed: 06-15-2022.

2. Intel. 3D XPoint \(^{\text {TM}} \) : A breakthrough in non-volatile memory technology. https://www.intel.com/content/www/us/en/architecture-and-technology/intel-micron-3d-xpoint-webcast.html. Accessed: 04-22-2022. Intel. 3D XPoint \(^{\text {TM}} \) : A breakthrough in non-volatile memory technology. https://www.intel.com/content/www/us/en/architecture-and-technology/intel-micron-3d-xpoint-webcast.html. Accessed: 04-22-2022.

3. Micron. NVDIMM: Persistent memory performance. https://media-www.micron.com/-/media/client/global/documents/products/product-flyer/nvdimm_flyer.pdf?rev=0c295086bb4c43729b89f369219259bc , December 2017 . Accessed : 06-15-2022. Micron. NVDIMM: Persistent memory performance. https://media-www.micron.com/-/media/client/global/documents/products/product-flyer/nvdimm_flyer.pdf?rev=0c295086bb4c43729b89f369219259bc, December 2017. Accessed: 06-15-2022.

4. Dell. Dell EMC NVDIMM-N persistent memory: user guide. https://dl.dell.com/topicspdf/nvdimm_n_user_guide_en-us.pdf , February 2021 . Accessed : 06-15-2022. Dell. Dell EMC NVDIMM-N persistent memory: user guide. https://dl.dell.com/topicspdf/nvdimm_n_user_guide_en-us.pdf, February 2021. Accessed: 06-15-2022.

5. Hewlett Packard Enterprise . HPE NVDIM Ms . https://www.hpe.com/psnow/doc/c04939369.html , November 2021 . Accessed : 06-15-2022. Hewlett Packard Enterprise. HPE NVDIMMs. https://www.hpe.com/psnow/doc/c04939369.html, November 2021. Accessed: 06-15-2022.

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