1. An overview of smart power technology
2. The Trench Power MOSFET: Part I—History, Technology, and Prospects
3. R. K. Williams , W. Grabowski , M. Darwish , H. Yilmaz , M. Chang and K. Owyang , " A 30-V P-channel trench gated DMOSFET with 900 μΩ-cm2 specific on-resistance at 2.7 V," in Proc . 8th Int. Symp. Power Semicond. Devices ICs (ISPSD) , Maui, HI, USA , 1996 , pp. 53 -- 56 . doi: 10.1109/ISPSD.1996.509447. 10.1109/ISPSD.1996.509447 R. K. Williams, W. Grabowski, M. Darwish, H. Yilmaz, M. Chang and K. Owyang, "A 30-V P-channel trench gated DMOSFET with 900 μΩ-cm2 specific on-resistance at 2.7 V," in Proc. 8th Int. Symp. Power Semicond. Devices ICs (ISPSD), Maui, HI, USA, 1996, pp. 53--56. doi: 10.1109/ISPSD.1996.509447.
4. Low cost v-groove MOS NOR-gate and method of manufacture;Rodgers T. J.;U.S. Patent,1973
5. VMOS—A new MOS integrated circuit technology