K-band Low Noise Amplifier based on 65nm CMOS

Author:

Dong Shujing1ORCID,Deng Juan1ORCID,Wang Yijie1ORCID,Jiang Dandan1ORCID

Affiliation:

1. Chengdu University of Information Technology, China

Publisher

ACM

Reference10 articles.

1. K. G. Kjelgård and T. S. Lande , A K-band UWB receiver front-end with passive mixer in 90 nm CMOS[C] . 2013 IEEE International Conference on Ultra-Wideband (ICUWB) , 2013: 180-183. K. G. Kjelgård and T. S. Lande, A K-band UWB receiver front-end with passive mixer in 90 nm CMOS[C]. 2013 IEEE International Conference on Ultra-Wideband (ICUWB), 2013: 180-183.

2. A Differential Cross-Coupling Common Gate Low Noise Amplifier (LNA) for MedRadio Band Application

3. A Low-Noise Amplifier Utilizing Current-Reuse Technique and Active Shunt Feedback for MedRadio Band Applications

4. Cao Z , He J , Peng Y , A K-band high-gain LNA in 0.13-μm RF CMOS[C]//2019 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) . IEEE , 2019 : 1-3. Cao Z, He J, Peng Y, A K-band high-gain LNA in 0.13-μm RF CMOS[C]//2019 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2019: 1-3.

5. Chiu Y T Lin Y S Chang J F. A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain[C]//2010 IEEE MTT-S International Microwave Symposium. IEEE 2010: 381-384. Chiu Y T Lin Y S Chang J F. A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain[C]//2010 IEEE MTT-S International Microwave Symposium. IEEE 2010: 381-384.

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