DudeTM
Author:
Affiliation:
1. Tsinghua University, Beijing, China
2. University of Southern California, Los Angeles, USA
3. Microsoft Research, Beijing, China
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3037697.3037714
Reference58 articles.
1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
2. Spin-transfer torque magnetic random access memory (STT-MRAM)
3. Let's Talk About Storage & Recovery Methods for Non-Volatile Memory Database Systems
4. Workload analysis of a large-scale key-value store
5. Atwood G. Current and emerging memory technology landscape. Flash memory summit (2011) 9--11. Atwood G. Current and emerging memory technology landscape. Flash memory summit (2011) 9--11.
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