Affiliation:
1. University of Pittsburgh
Abstract
Phase Change Memory (PCM) has recently emerged as a promising memory technology. However, PCM’s limited write endurance restricts its immediate use as a replacement for DRAM. To extend the lifetime of PCM chips, wear-leveling and salvaging techniques have been proposed. Wear-leveling balances write operations across different PCM regions while salvaging extends the duty cycle and provides graceful degradation for a nonnegligible number of failures.
Current wear-leveling and salvaging schemes have not been designed and integrated to work cooperatively to achieve the best PCM device lifetime. In particular, a noncontiguous PCM space generated from salvaging complicates wear-leveling and incurs large overhead. In this article, we propose LLS, a Line-Level mapping and Salvaging design. By allocating a dynamic portion of total space in a PCM device as backup space, and mapping failed lines to backup PCM, LLS constructs a contiguous PCM space and masks lower-level failures from the OS and applications. LLS integrates wear-leveling and salvaging and copes well with modern OSes. Our experimental results show that LLS achieves 31% longer lifetime than the state-of-the-art. It has negligible hardware cost and performance overhead.
Funder
Division of Computing and Communication Foundations
Division of Computer and Network Systems
Publisher
Association for Computing Machinery (ACM)
Subject
Hardware and Architecture,Information Systems,Software
Cited by
12 articles.
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