Defining a high-level programming model for emerging NVRAM technologies-Reference-Cited by-同舟云学术

Defining a high-level programming model for emerging NVRAM technologies

Published:2018 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 15th International Conference on Managed Languages & Runtimes - ManLang '18
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Author:

Shull Thomas¹,Huang Jian¹,Torrellas Josep¹

Affiliation:

1. University of Illinois at Urbana-Champaign

Publisher

ACM Press

Reference39 articles.

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2. Intel Optane Technology. https://www.intel.com/content/www/us/en/architecture-and-technology/intel-optane-technology.html

3. NVM Programming Model vl.2. https://www.snia.org/sites/default/files/technical_work/final/NVMProgrammingModel_v1.2.pdf

4. Persistent Memory Development Kit. http://pmem.io/pmdk/

5. H. Akinaga and H. Shima. 2010. Resistive Random Access Memory (ReRAM) Based on Metal Oxides.Proc. IEEE98, 12 (Dec 2010), 2237--2251.

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