STT-MRAM for real-time embedded systems-Reference-Cited by-同舟云学术

STT-MRAM for real-time embedded systems

Published:2019-09-30 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the International Symposium on Memory Systems
language:
Short-container-title:

Author:

Asifuzzaman Kazi¹,Fernandez Mikel²,Radojković Petar²,Abella Jaume²,Cazorla Francisco J.²

Affiliation:

1. Universitat Politècnica de Catalunya, Barcelona, Spain

2. Barcelona Supercomputing Center, Barcelona, Spain

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3357526.3357531

Reference52 articles.

1. Flipping bits in memory without accessing them: An experimental study of DRAM disturbance errors

2. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram

3. Everspin Technologies Inc. STT-MRAM Products. https://www.everspin.com/stt-mram-products 2018. Everspin Technologies Inc. STT-MRAM Products. https://www.everspin.com/stt-mram-products 2018.

4. European Space Agency. GR740: The ESA Next Generation Microprocessor (NGMP). http://microelectronics.esa.int/gr740/index.html. European Space Agency. GR740: The ESA Next Generation Microprocessor (NGMP) . http://microelectronics.esa.int/gr740/index.html.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Detailed Study of SOT-MRAM as an Alternative to DRAM Primary Memory in Multi-Core Environment;IEEE Access;2024

2. Tunneling magnetoresistance materials and devices for neuromorphic computing;Materials Futures;2023-08-04

3. Optimized fast data migration for hybrid DRAM/STT-MRAM main memory;IEICE Electronics Express;2022-01-10

4. Fast cacheline-based data replacement for hybrid DRAM and STT-MRAM main memory;IEICE Electronics Express;2020-05-25