Improving Block Management in 3D NAND Flash SSDs with Sub-Block First Write Sequencing
Author:
Affiliation:
1. ECE, Colorado State University, USA
2. ECE, University of Alabama in Huntsville, USA
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3649476.3658803
Reference17 articles.
1. M. Buddhanoy et al.2023. Electrostatic Shielding of NAND Flash Memory from Ionizing Radiation. In 2023 IRPS.
2. H. Y. Chang et al.2016. How to enable software isolation and boost system performance with sub-block erase over 3D flash memory. In 2016 CODES+ISSS.
3. F. H. Chen et al.2015. PWL: a progressive wear leveling to minimize data migration overheads for nand flash devices. In 2015 DATE.
4. T. Y. Chen et al.2016. Enabling sub-blocks erase management to boost the performance of 3D NAND flash memory. In Proc. of 2016 ACM DAC.
5. Y. A. Chung et al.2023. Common Source Line-to-Word Line Short Improvement by Eliminating SLT Sidewall Notch in 3D NAND Deep Trench Patterning. In 2023 ASMC.
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