A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond f MAX of transistors
Author:
Affiliation:
1. Qualcomm Inc.
2. University of Electronic Science and Technology of China, Chengdu,, China
3. University of California-Irvine
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3109453.3122843
Reference16 articles.
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2. CMOS diodes operating beyond avalanche frequency
3. 14.7 A 300GHz frequency synthesizer with 7.9% locking range in 90nm SiGe BiCMOS
4. G. I. Haddad P. T. Greiling and W. E. Schroeder. Basic Principles and Properties of Avalanche Transit-Time Devices. 18 11 (????) 752--772. 10.1109/TMTT.1970.1127352 G. I. Haddad P. T. Greiling and W. E. Schroeder. Basic Principles and Properties of Avalanche Transit-Time Devices. 18 11 (????) 752--772. 10.1109/TMTT.1970.1127352
5. Ruonan Han and E. Afshari. A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy. 48 12 (????) 3090--3104. 10.1109/JSSC.2013.2272864 Ruonan Han and E. Afshari. A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy. 48 12 (????) 3090--3104. 10.1109/JSSC.2013.2272864
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