105W Highly Efficient Ku band GaN HEMT Power Amplifier-Reference-Cited by-同舟云学术

105W Highly Efficient Ku band GaN HEMT Power Amplifier

Published:2018 Issue: Volume: Page:
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Container-title:Proceedings of the 2018 International Conference on Communication Engineering and Technology - ICCET '18
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Author:

Ratnaparkhi Vivek¹,Hiwale Anil²

Affiliation:

1. Department of Electronics & Telecommunication Engineering, Shri Sant Gajanan Maharaj College of Engineering, Shegaon, Maharashtra, India

2. Department of Information Technology, MIT College of Engineering, Pune, Maharashtra, India

Publisher

ACM Press

Reference12 articles.

1. Kazuhisa Yamauchi, Hifumi Noto, Hiroyuki Nonomura, Satoshi Kunugi, Masatoshi Nakayama, and Yoshihito Hirano "A 45% Power Added Efficiency, Ku-band 60W GaN Power Amplifier" IEEE MTT-S International Microwave Symposium Digest (MTT), 2011, 5--10, June 2011.

2. Hitoshi Sumi, Hiroki Takahashi, Tomohide Soejima, and Ryo Mochizuki "Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs" IEEE MTT-S International, Microwave Symposium Digest 2009, MTT '09, 7--12, June 2009, pp. 1389--1392.

3. Allen Katz and Marc Franco "GaN comes of Age, IEEE Microwave Magazine", VOL. 11, Issue 07, pp. 524--534, December 2005.

4. Daniel Maassen, Felix Rautschke, Florian Ohnimus, Lothar Schenk, Uwe Dalisda and Georg Boeck "70W GaN-HEMT Ku-Band Power Amplifier in MIC Technology" IEEE Trans. on Microwave Theory and Techniques, VOL. 65, NO. 4, pp. 1272--1282, APRIL 2017.

5. Mhd. Tareq Arnous, Khaled Bathich, Sebestian Preis, Daniel Gruner, Georg Boeck "100 W Highly Efficient Octave Bandwidth GaN HEMT Power Amplifier" 19th International Conference on Microwaves, Radar and Wireless Communications, Warsaw, Poland, pp. 289--292, May 2012.