Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace Applications-Reference-Cited by-同舟云学术

Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace Applications

Published:2022-06-06 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the Great Lakes Symposium on VLSI 2022
language:
Short-container-title:

Author:

Yan Aibin¹,He Zhihui¹,Xiang Jing¹,Cui Jie¹,Zhou Yong¹,Huang Zhengfeng²,Girard Patrick³,Wen Xiaoqing⁴

Affiliation:

1. Anhui University, Hefei, China

2. Hefei University of Technology, Hefei, China

3. University of Montpellier / CNRS, Montpellier, France

4. Kyushu Institute of Technology, Fukuoka, Japan

Funder

Open Project of the State Key Laboratory of Computing Institute of Chinese Academy of Sciences

National Natural Science Foundation of China

JSPS Grant-in-Aid for Scientific Research (B)

NSFC-JSPS Exchange Program

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3526241.3530312

Reference25 articles.

1. Cost-Effective and Highly Reliable Circuit-Components Design for Safety-Critical Applications

2. H. Liang , Z. Wang , Z. Huang , IEEE Asian Test Symposium , pp. 19 -- 24 , 2014 . H. Liang, Z. Wang, Z. Huang, et al, "Design of a Radiation Hardened Latch for Low-power Circuits," IEEE Asian Test Symposium, pp.19--24, 2014.

3. Scaling Trends and Bias Dependence of the Soft Error Rate of 16 nm and 7 nm FinFET SRAMs;Narasimham B.;International Reliability Physics Symposium,2018

4. A Methodology for Characterization of SET Propagation in SRAM-Based FPGAs

5. Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low power Schmitt-trigger driven 10T SRAM Cell for high speed applications;Integration;2024-07