Ambipolar double gate CNTFETs based reconfigurable logic cells
Author:
Funder
French National Research Agency
Publisher
ACM Press
Reference24 articles.
1. R. Vaddi and al, "Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design", J. Low Power Electron., pp 277--302, 2011
2. Ismail Saad et al, "Performance Design and Simulation Analysis of Vertical Double Gate MOSFET (VDGM)", UKSIM '11 Proceedings of the 2011 UKSim 13th International Conference on Modelling and Simulation
3. Paul Beckett, "A Low-Power Reconfigurable Logic Array Based on Double-Gate Transistors", IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 16, NO. 2, FEBRUARY 2008
4. M. H. Ben Jamaa et al, " FPGA Design with Double-Gate Carbon Nanotube Transistors", ECS Transactions, 34 (1) 1005--1010 (2011)
5. Hassoune, I., O'Connor, I. 2007. Double-Gate MOSFET Based Reconfigurable Cells. El. Lett. 43, 23 (Nov. 2007), 1273--1274.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Implementation of Ambipolar CNTFET based logic gates and their performance comparison with CNTFET and CMOS based logic gates;2023 International Conference on Recent Advances in Electrical, Electronics & Digital Healthcare Technologies (REEDCON);2023-05-01
2. Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review;Silicon;2022-03-26
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