SRAM leakage in CMOS, FinFET and CNTFET technologies-Reference-Cited by-同舟云学术

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SRAM leakage in CMOS, FinFET and CNTFET technologies

Published:2012 Issue: Volume: Page:
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Container-title:Proceedings of the great lakes symposium on VLSI - GLSVLSI '12
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Author:

Zhang Zhe,Turi Michael A.,Delgado-Frias José G.

Publisher

ACM Press

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3:1 multiplexers in 32‐nm GNRFET technology;International Journal of Circuit Theory and Applications;2023-05-23

2. A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time;AEU - International Journal of Electronics and Communications;2023-04

3. Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM;IEEE Transactions on Device and Materials Reliability;2022-12

4. Design and Stability analysis of CNTFET based SRAM cell;IOP Conference Series: Materials Science and Engineering;2021-01-01

5. An ultra-low-power and high-performance SRAM cell design based on GNRFETs;International Journal of Electronics Letters;2020-07-20

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