Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure

Author:

Zhang Kang1ORCID,Wu Yu1ORCID,Hu Dongqing1ORCID,Jia Yunpeng1ORCID,Zhou Xintian1ORCID

Affiliation:

1. Faculty of Information Technology Beijing University of Technology, China

Publisher

ACM

Reference10 articles.

1. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

2. Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide[J];Industry 4,2020

3. Status and prospects for SiC power MOSFETs

4. Tominaga, Takaaki, "Superior switching characteristics of SiC-MOSFET embedding SBD." 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2019.

5. Tsuchida, H., "Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control." 2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019.

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