Fogging Effect Aware Placement in Electron Beam Lithography-Reference-Cited by-同舟云学术

Fogging Effect Aware Placement in Electron Beam Lithography

Published:2017-06-18 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 54th Annual Design Automation Conference 2017
language:
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Author:

Huang Yu-Chen¹,Chang Yao-Wen²

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3061639.3062252

Reference23 articles.

1. Simulation and correction of resist charging due to fogging in electron-beam lithography

2. Dose variation and charging due to fogging in electron beam lithography: simulations using CHARIOT Monte Carlo software

3. ISPD 2015 Benchmarks with Fence Regions and Routing Blockages for Detailed-Routing-Driven Placement

4. EUV and e-beam manufacturability

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3. Novel Proximal Group ADMM for Placement Considering Fogging and Proximity Effects;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2022-12

4. Novel proximal group ADMM for placement considering fogging and proximity effects;Proceedings of the International Conference on Computer-Aided Design;2018-11-05

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