Dynamic Circuit Model of SiC VJFET For Power Integrated Circuit Design-Reference-Cited by-同舟云学术

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Dynamic Circuit Model of SiC VJFET For Power Integrated Circuit Design

Published:2018 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the Fourth International Conference on Engineering & MIS 2018 - ICEMIS '18
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Author:

Ghedira Sami¹,Morel Hervé²,Besbes Kamel³

Affiliation:

1. Microelectronics and Instrumentation Lab. FSM, University of Monastir, Monastir, Tunisia

2. Ampere Laboratory, Université de Lyon, France

3. Microelectronics & Nanotechnology Sousse Technology Park, Microelectronics & Instrumentation Lab, University of Monastir, Tunisia

Publisher

ACM Press

Reference13 articles.

1. Tanaka, Y., Okamoto, M., Takatsuka, A., Arai, K., Yatsuo, T., Yano, K. and Kasuga, M. 700 V 1.0 mW cm2 Buried Gate SiC-SIT (SiC-BGSIT). IEEE Electron Device Letters, 27, 11 (2006), 908--910.

2. Morisette, D. T. and Cooper, J. A. Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations. IEEE Transactions on Electron Devices, 49, 9 (2002), 1657--1664.

3. Kashyap, A. S., Ramavarapu, P. L., Lal, S. M., McNutt, T. R., Lostetter, A. B., Funaki, T. and Mantooth, H. A. Compact circuit simulation model of silicon carbide static induction and junction field effect transistors. City, 2004.

4. Funaki, T., Kashyap, A. S., Mantooth, H. A., Balda, J. C., Barlow, F. D., Kimoto, T. and Hikihara, T. Characterization of SiC JFET for temperature dependent device modeling. City, 2006.

5. Mousa, R., Planson, D., Morel, H. and Raynaud, C. High temperature characterization of SiC-JFET and modelling. City, 2007.

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