A sub-1mA highly linear inductorless wideband LNA with low IP3 sensitivity to variability for IoT applications

Author:

Costa Arthur Liraneto Torres1,Klimach Hamilton1,Bampi Sergio1

Affiliation:

1. Federal University of Rio Grande do Sul, Porto Alegre, Brazil

Funder

FAPERGS

CAPES

CNPq

Publisher

ACM Press

Reference20 articles.

1. H. Alsuraisry, S. Hsiao, Y. Lin, P. Li, J. Tsai, and T. Huang. 2017. A review of microwatt low-noise amplifier for microwave and millimeter-wave IoT applications. In 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). 71--73.

2. D. Barras, F. Ellinger, H. Jackel, and W. Hirt. 2004. A low supply voltage SiGe LNA for ultra-wideband frontends. Microwave and Wireless Components Letters, IEEE 14, 10 (Oct 2004), 469--471.

3. S.C. Blaakmeer, E.A.M. Klumperink, B. Nauta, and D.M.W. Leenaerts. 2008. Wideband CMOS Receivers exploiting Simultaneous Output Balancing and Noise/Distortion Canceling. In Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European. 163--166.

4. G. Cafaro, T. Gradishar, J. Heck, S. Machan, G. Nagaraj, S. Olson, R. Salvi, B. Stengel, and B. Ziemer. 2007. A 100 MHz 2.5 GHz Direct Conversion CMOS Transceiver for SDR Applications. In 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. 189--192.

5. Bo-Yang Chang and C.F. Jou. 2005. Design of a 3.1-10.6GHz low-voltage, low-power CMOS low-noise amplifier for ultra-wideband receivers. In Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings, Vol. 2.4 pp.-.

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