A New Configuration of a Microstrip Power Amplifier Using Si-BJT in Class-A Mode for DCS Applications-Reference-Cited by-同舟云学术

A New Configuration of a Microstrip Power Amplifier Using Si-BJT in Class-A Mode for DCS Applications

Published:2017 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2nd International Conference on Computing and Wireless Communication Systems - ICCWCS'17
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Author:

Rachakh Amine¹,El Abdellaoui Larbi¹,Errkik Ahmed¹,Tajmouati Abdelali¹,Latrach Mohamed²

Affiliation:

1. LMEET Laboratory FST of Settat Hassan 1st University, Morocco

2. Microwave group ESEO Angers, France

Publisher

ACM Press

Reference18 articles.

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2. Guha, K., Ganguly, P. and Baishya, S. 2013. Performance analysis of low power and high frequency novel RF Power Amplifier for 4G systems. Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of (2013), 1--2.

3. Jato, Y., Herrera, A., de Astis, G. and Huin, F.C. 2013. Tunable integrated output impedance transformer on a power amplifier for 4G applications. Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International (2013), 1--4.

4. Makioka, S., Yoshikawa, N. and Kanazawa, K. 1996. A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones. IEEE transactions on microwave theory and techniques. 44, 5 (1996), 717--722.

5. Arrawatia, M., Baghini, M.S. and Kumar, G. 2015. A CMOS power amplifier with 180° hybrid on-chip coupler for 4G applications. Circuits and Systems (MWSCAS), 2015 IEEE 58th International Midwest Symposium on (2015), 1--4.