Minimal Design of SiDB Gates: An Optimal Basis for Circuits Based on Silicon Dangling Bonds-Reference-Cited by-同舟云学术

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Minimal Design of SiDB Gates: An Optimal Basis for Circuits Based on Silicon Dangling Bonds

Published:2023-12-18 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 18th ACM International Symposium on Nanoscale Architectures
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Author:

Drewniok Jan¹^ORCID,Walter Marcel¹^ORCID,Wille Robert²^ORCID

Affiliation:

1. Chair for Design Automation, Technical University of Munich, Germany

2. Chair for Design Automation, Technical University of Munich, Germany and Software Competence Center Hagenberg GmbH, Austria

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3611315.3633241

Reference31 articles.

1. R. Achal 2018. Lithography for Robust and Editable Atomic-scale Silicon Devices and Memories. Nature Communications (2018).

2. A. N. Bahar 2020. Atomic Silicon Quantum Dot: A new Designing Paradigm of an Atomic Logic Circuit. TNANO (2020).

3. J. Drewniok 2023. QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic. In IEEE-NANO.

4. J. Drewniok 2023. Temperature Behavior of Silicon Dangling Bond Logic. In IEEE-NANO.

5. M. B. Haider 2009. Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature. Physical Review Letters (2009).

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