Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices-Reference-Cited by-同舟云学术

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Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Published:2016 Issue:4(1) Volume:8 Page:04030-1-04030-4
ISSN:2077-6772
Container-title:Journal of Nano- and Electronic Physics
language:
Short-container-title:J. Nano- Electron. Phys.

Author:

Dongale T. D., ,Khot K. V.,Mohite S. V.,Khandagale S. S.,Shinde S. S.,Patil V. L.,Vanalkar S. A.,Moholkar A. V.,Rajpure K. Y.,Bhosale P. N.,Patil P. S.,Gaikwad P. K.,Kamat R. K., , , , , , , , , , , ,

Publisher

Sumy State University

Subject

Condensed Matter Physics,General Materials Science,Radiation

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices;Results in Physics;2019-03

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