Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs-Reference-Cited by-同舟云学术

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Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs

Published:2018-12-23 Issue:6 Volume:9 Page:789-792
ISSN:2220-8054
Container-title:Nanosystems: Physics, Chemistry, Mathematics
language:
Short-container-title:Nanosystems: Phys. Chem. Math.

Author:

Mitin D.M.,Soldatenkov F.Yu.,Mozharov A.M.,Vasil'ev A.A.,Neplokh V.V.,Mukhin I.S.

Publisher

ITMO University

Subject

Physics and Astronomy (miscellaneous),Condensed Matter Physics,Materials Science (miscellaneous),Mathematics (miscellaneous)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate;Technical Physics;2023-12

2. Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters;Technical Physics Letters;2023-12

3. Realizing high thermoelectric performance in highly (0l0)-textured flexible Cu2Se thin film for wearable energy harvesting;Materials Today Physics;2022-05

4. Optoelectronic characterization of laser diodes with different electrode structures;Circuit World;2022-02-15

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