Leakage conduction mechanism of amorphous Lu 2 O 3 high-k dielectric films fabricated by pulsed laser ablation-Reference-Cited by-同舟云学术

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Leakage conduction mechanism of amorphous Lu 2 O 3 high-k dielectric films fabricated by pulsed laser ablation

Published:2007-03 Issue:6 Volume:77 Page:67001
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Yuan C. L,Darmawan P,Chan M. Y,Lee P. S

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/0295-5075/77/67001/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics;Journal of Materials Science: Materials in Electronics;2020-04-03

2. Interface-Controlled Carrier Transport in Metal-Lutetium Oxide-Metal Structures Deposited by Electron-Beam Evaporation Technique;MRS Advances;2017-05-02

3. Physical and electrical properties of bilayer CeO2/TiO2 gate dielectric stack;Materials Science and Engineering: B;2016-08

4. Switching properties of SrRuO 3 /Pb(Zr 0.4 Ti 0.6 )O 3 /SrRuO 3 capacitor grown on Cu-coated Si substrate measured at various temperatures;EPL (Europhysics Letters);2014-09-01

5. Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy;Applied Surface Science;2012-06

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