Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures-Reference-Cited by-同舟云学术

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Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures

Published:1990-07-01 Issue:5 Volume:12 Page:417-422
ISSN:0295-5075
Container-title:Europhysics Letters (EPL)
language:
Short-container-title:Europhys. Lett.

Author:

Colocci M,Gurioli M,Vinattieri A,Fermi F,Deparis C,Massies J,Neu G

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/0295-5075/12/5/007/pdf

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields;Physical Review B;2022-01-18

2. Thermally induced changes of the electro-optical properties of semi-insulating GaAs/AlGaAs multiple quantum well structures;Optical Materials;2019-03

3. Observation of interlayer excitons in MoSe2 single crystals;Physical Review B;2018-06-07

4. Spin dynamics and magneto-optical response in charge-neutral tunnel-coupled quantum dots;Semiconductor Science and Technology;2017-03-06

5. Exact two-body quantum dynamics of an electron-hole pair in semiconductor coupled quantum wells: A time-dependent approach;Physical Review B;2016-05-12

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