Excitonic Transitions in Photoluminescence and Reflectivity of GaAs/Al x Ga 1- x As Superlattices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1209/0295-5075/6/2/013/pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Excitonic optical properties of nanostructures: real density matrix approach;RIV NUOVO CIMENTO;2003
2. Temperature dependence of the Γ8v‐Γ6cgap of GaAs;Journal of Applied Physics;1993-08-15
3. Influence of Al content in the barrier on the optical properties of GaAs/AlxGa1−xAs (x=0.1–1) multiple-quantum-well structures;Physical Review B;1992-09-15
4. Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices;Advances in Physics;1991-10
5. Two-photon spectroscopy in GaAs/AlxGa1−xAs multiple quantum wells;Physical Review B;1989-07-15
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