Magnetic order and electronic structure of [110]-oriented LaTiO3 films: A theoretical study

Author:

Weng Yakui,Long Fei,Li Xing'ao

Abstract

Abstract The epitaxial strain effects on the magnetic ground state and electronic structure of [110]-oriented LaTiO3 films have been calculated using the density functional theory. First, the lattice constants of the a-axis and c-axis are fixed to study. For the compressive strain, a magnetic phase transition from the original G-type antiferromagnet to A-type antiferromagnet is predicted when using the SrTiO3, LaGaO3, and LaAlO3 substrates, similar to the [001] case. Interestingly, a new magnetic phase, i.e., the ferromagnetic order, will appear when the larger compressive LaSrAlO4 is used. For the tensile strain, although the G-type antiferromagnetic order is robust as the ground state, the exchange couplings are significantly increased, which will enhance the Néel temperature. Furthermore, the contributions of d yz , d xz and d xy orbitals to the bands near the Fermi level show an obvious difference due to the Jahn-Teller distortions. For comparison, the case with fixed b-axis and c-axis is also tested, which shows that the compressive strained LaTiO3 remains the G-type antiferromagnetic order while the tensile strained LaTiO3 exhibits the A-type antiferromagnetic order. The underlying physical mechanisms are the lattice distortions, including the Ti-O-Ti bond angles and Ti-O bond lengths.

Funder

Natural Science Foundation of Jiangsu Province

Science Foundation from Nanjing University of Posts and Telecommunications

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3