Thermal Decomposition Process of Ultrathin Oxide Layers on Si(100)-Reference-Cited by-同舟云学术

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Thermal Decomposition Process of Ultrathin Oxide Layers on Si(100)

Published:2008 Issue:9 Volume:29 Page:537-542
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

KINEFUCHI Ikuya¹,YAMAGUCHI Hiroki²,SAKIYAMA Yukinori³,TAKAGI Shu¹⁴,MATSUMOTO Yoichiro¹

Affiliation:

1. Department of Mechanical Engineering, The University of Tokyo

2. Department of Micro-Nano Systems Engineering, Nagoya University

3. Department of Chemical Engineering, University of California, Berkeley

4. Computational Science Research Program, RIKEN

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/29/9/29_9_537/_pdf

Reference33 articles.

1. Surface chemistry on semiconductors studied by molecular-beam reactive scattering

2. Atomic transport during growth of ultrathin dielectrics on silicon

3. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Effects in the Stability of 2D Silica, Silicide, and Silicene on Pt(111) and Rh(111);ACS Applied Materials & Interfaces;2024-05-15

2. Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires;Journal of Crystal Growth;2021-07

3. Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy;Scientific Reports;2017-10-27

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