Development of Methods of Creating and Observing Atomically-ordered Side-surfaces on Three-dimensionally Architected Si Substrates-Reference-Cited by-同舟云学术

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Development of Methods of Creating and Observing Atomically-ordered Side-surfaces on Three-dimensionally Architected Si Substrates

Published:2019-07-10 Issue:7 Volume:62 Page:427-432
ISSN:2433-5835
Container-title:Vacuum and Surface Science
language:en
Short-container-title:Vac. Surf. Sci.

Author:

HATTORI Azusa N.¹²,TAKEMOTO Shohei¹,YANG Haoyu³,HATTORI Ken³,DAIMON Hiroshi³,TANAKA Hidekazu¹

Affiliation:

1. Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University

2. JST-PRESTO

3. Graduate School of Science and Technology, Nara Institute of Science and Technology

Publisher

Surface Science Society Japan

Link

https://www.jstage.jst.go.jp/article/vss/62/7/62_20180380/_pdf

Reference17 articles.

1. 1) G.E. Moore : Electronics 38, 114 (1965).

2. 2) K. Takayanagi, Y. Tanishiro, S. Takahashi and M. Takahashi : Surf. Sci. 164, 367 (1985).

3. 3) S. Ino : Jpn. J. Appl. Phys. 16, 891 (1977).

4. 4) D.J. Chadi : Phys. Rev. Lett. 43, 43 (1979).

5. 5) Y. Yamamoto, S. Ino and T. Ichikawa : Jpn. J. Appl. Phys. 25, L331 (1986).

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