Generation Mechanism of Resistive Switching Effect Induced by Introductionof Hydrogen Ions into Perovskite-Type Oxide-Reference-Cited by-同舟云学术

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Generation Mechanism of Resistive Switching Effect Induced by Introductionof Hydrogen Ions into Perovskite-Type Oxide

Published:2014 Issue:7 Volume:35 Page:356-360
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

HANADA Akihiro¹,MIURA Hiroki¹,NOTSU Takeshi¹,OSAWA Hitoshi²,INA Toshiaki²,SUZUKI Motohiro²,KAWAMURA Naomi²,MIZUMAKI Masaichiro²,URUGA Tomoya²,KIMURA Shigeru²,KISHIDA Satoru³¹,KINOSHITA Kentaro³¹

Affiliation:

1. Tottori University

2. JASRI/SPring-8

3. Tottori University Electronic Display Research Center

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Reference12 articles.

1. 1) A. Baikalov, Y.Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y.Y. Sun, Y.Y. Xue and C.W. Chu: Appl. Phys. Lett. 83, 957 (2003).

2. 2) K. Szot, W. Speier, G. Bihlmayer and R. Waser: Nat. Mater. 5, 312 (2006).

3. 3) Y.B. Nian, J. Strozier, N.J. Wu, X. Chen and A. Ignatiev: Phys. Rev. Lett. 98, 146403 (2007).

4. 4) A. Hanada, K. Kinoshita and S. Kishida: Appl. Phys. Lett. 101, 043507 (2012).

5. 5) A. Hanada, K. Kinoshita, K. Matsubara, T. Fukuhara and S. Kishida: J. Appl. Phys. 110, 084506 (2011).

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