Relation between the Generation of Misfit Dislocations at InAs/GaAs(110) Heterointerface and the Growth Mode.-Reference-Cited by-同舟云学术

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Relation between the Generation of Misfit Dislocations at InAs/GaAs(110) Heterointerface and the Growth Mode.

Published:2001 Issue:4 Volume:22 Page:238-247
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

OYAMA Norihisa¹,OKAJIMA Ko²,OHTA Eiji¹,TAKEDA Kyozaburo²,SHIRAISHI Kenji³,YAMAGUCHI Hiroshi³,ITO Tomonori⁴,OHNO Takahisa⁵

Affiliation:

1. Department of Material Science, Keio University

2. Department of Material Science and Engineering, Waseda University

3. NTT Basic Research Laboratories

4. Department of Physics Engineering, Mie University

5. National Institute for Materials Science

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/22/4/22_4_238/_pdf

Reference19 articles.

1. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy

2. Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

3. Two-dimensional growth of InSb thin films on GaAs(111)A substrates

4. Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium

5. 5) K. Nakajima: Jpn. J. Appl. Phys. 38, 1875 (1999).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate;Physica E: Low-dimensional Systems and Nanostructures;2010-09

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