Possibility of the Thickness Estimation of Si Surface Oxides Using Ga+ Primary Ion TOF-SIMS-Reference-Cited by-同舟云学术

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Possibility of the Thickness Estimation of Si Surface Oxides Using Ga+ Primary Ion TOF-SIMS

Published:2004 Issue:6 Volume:25 Page:359-362
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

LI Zhanping¹,HIROKAWA Kichinosuke¹

Affiliation:

1. ULVAC-PHI, Inc.

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/25/6/25_6_359/_pdf

Reference19 articles.

1. 1) 鈴木茂:金属系素材の表面.界面現象のXPS解析,アルバック.ファイ(株) ESCAユーザーズミーティング.

2. 2) S.W. Novak, E.J. Bekos and J.W. Marino: Appl. Surf. Sci. 175/176, 678 (2001).

3. Secondary ion mass spectrometry and x-ray photoelectron spectroscopy correlation study of nitrided gate oxide

4. The Thickogram: a method for easy film thickness measurement in XPS

5. Accuracy of the non-destructive surface nanostructure quantification technique based on analysis of the XPS or AES peak shape

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films;Scientific Reports;2021-04-07

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