Multilayer Si(111)/Mg2Si clusters/Si heterostructures: Formation, optical and thermoelectric properties
Author:
Affiliation:
1. Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Russia
2. Physics-Technical Faculty, Far Eastern State University, Russia
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
http://www.jstage.jst.go.jp/article/ejssnt/3/0/3_0_12/_pdf
Reference22 articles.
1. Electronic structure of generic semiconductors: Antifluorite silicide and III-V compounds
2. Self-Consistent Calculations of the Energy Band Structure ofMg2Si
3. Bonding nature of conduction states in electron-deficient semiconductors: Mg2Si
4. Valence-Band Density of States for Mg2Si from Pseudopotential Calculation
5. Semiconducting Properties ofMg2Si Single Crystals
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2. Surface electronic structure, relaxations and thermodynamic energies of (100), (110) and (111) surfaces of Mg2Si: A first-principles theoretical study;Surface Science;2020-01
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