Mapping Accumulated Charges at the Semiconductor/Insulator Interface of Organic Field-Effect Transistors by Sum-Frequency Generation Spectroscopy-Reference-Cited by-同舟云学术

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Mapping Accumulated Charges at the Semiconductor/Insulator Interface of Organic Field-Effect Transistors by Sum-Frequency Generation Spectroscopy

Published:2018-08-09 Issue:0 Volume:16 Page:364-369
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotech.

Author:

Yang Haiya¹,Miyamae Takayuki¹,Miyashita Masato²

Affiliation:

1. Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

2. Research Association of High-Throughput Design and Development for Advanced Functional Materials (ADMAT)

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/16/0/16_364/_pdf

Reference24 articles.

1. [1] I. Kymissis, Organic Field Effect Transistors: Theory, Fabrication and Characterization (Springer, Boston, 2009). https://doi.org/10.1007/978-0-387-92134-1

2. [2] G. Horowitz, in: Organic Electronics. Advances in Polymer Science, Vol. 223, edited by T. Grasser, G. Meller, and L. Li (Springer, Berlin, Heidelberg, 2009) p. 113. https://doi.org/10.1007/12_2009_7

3. [3] Y. R. Shen, Annu. Rev. Phys. Chem. 40, 327 (1989). https://doi.org/10.1146/annurev.pc.40.100189.001551

4. [4] Y. R. Shen, Nature 337, 519 (1989). https://doi.org/10.1038/337519a0

5. [5] D. Yamada, T. Manaka, E. Lim, R. Tamura, M. Weis, and M. Iwamoto, J. Appl. Phys. 104, 074502 (2008). https://doi.org/10.1063/1.2988137

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