Changes in Surface Morphology and Photoluminescence Spectrum during Photoelectrochemical Etching of (0001) n-GaN on Sapphire-Reference-Cited by-同舟云学术

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Changes in Surface Morphology and Photoluminescence Spectrum during Photoelectrochemical Etching of (0001) n-GaN on Sapphire

Published:2010 Issue: Volume:8 Page:392-394
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Saito Yasuhiro¹,Kobayashi Naoki¹,Yamamoto Jun²,Ban Yuzaburo²,Matsumoto Koh²

Affiliation:

1. Department of Engineering Science, The University of Electro-Communications, Japan

2. TNEMC Ltd., Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/8/0/8_0_392/_pdf

Reference8 articles.

1. Room‐temperature photoenhanced wet etching of GaN

2. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

3. Dye-Sensitization Observed in Photoelectrochemically Etched n-Type Gallium Nitride

4. Electrochemical Etching and CV-Profiling of GaN

5. [5] H. Morkoç, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, Weinheim, 2008), Chap. 5.

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