Deposition of TaN Films by RF Sputtering and Their Barrier Properties in Cu/TaN/Dielectrics/Si MIS Structures-Reference-Cited by-同舟云学术

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Deposition of TaN Films by RF Sputtering and Their Barrier Properties in Cu/TaN/Dielectrics/Si MIS Structures

Published:2012 Issue:0 Volume:10 Page:107-113
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Tajima Hiroaki¹,Katsumata Hiroshi¹,Uekusa Shin-ichiro¹

Affiliation:

1. School of Science and Technology, Meiji University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/10/0/10_0_107/_pdf

Reference13 articles.

1. [1] S. M. Kang, S. G. Yoon, S. J. Suh, and D. H. Yoon, Thin Solid Films 516, 3568 (2008).

2. Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

3. [3] W.-H. Lee, J.-C. Lin, and C. Lee, Mat. Chem. and Phys. 68, 266 (2001).

4. [4] H. B. Nie, S. Y. Xu, S. J. Wang, L. P. You, Z. Yang, C. K. Ong, J. Li, and T. Y. F. Liew, Appl. Phys. A 73, 229 (2001).

5. Dependence of Cu∕Ta–N∕Ta Metallization Stability on the Characteristics of Low Dielectric Constant Materials

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