Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process-Reference-Cited by-同舟云学术

Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

Published:2014 Issue:0 Volume:12 Page:225-229
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Kawahara Toshio¹,Yamaguchi Satarou¹,Ohno Yasuhide²,Maehashi Kenzo²,Matsumoto Kazuhiko²,Okamoto Kazumasa³,Utsunomiya Risa⁴,Matsuba Teruaki⁴

Affiliation:

1. Center of Applied Superconductivity and Sustainable Energy Research, Chubu University

2. The Institute of Scientic and Industrial Research, Osaka University

3. Division of Quantum Science and Engineering, Faculty of Engineering, Hokkaido University

4. Nisshin Electric.

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/12/0/12_225/_pdf

Reference40 articles.

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4. [4] D. Kaminishi, H. Ozaki, Y. Ohno, K. Maehashi, K. Inoue, K. Matsumoto, Y. Seri, A. Masuda, and H. Matsumura, Appl. Phys. Lett. 86, 113115 (2005).

5. [5] K. Maehashi, Y. Ohno, K. Inoue, K. Matsumoto, T. Niki, and H. Matsumura, Appl. Phys. Lett. 92, 183111 (2008).

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