Interface Structure of an Epitaxial Iron Silicide on Si(111) Studied with X-Ray Diffraction-Reference-Cited by-同舟云学术

Interface Structure of an Epitaxial Iron Silicide on Si(111) Studied with X-Ray Diffraction

Published:2009 Issue: Volume:7 Page:513-517
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Shirasawa Tetsuroh¹,Sekiguchi Kouji¹,Iwasawa Yusaku¹,Voegeli Wolfgang¹,Takahashi Toshio¹,Hattori Ken²³,Hattori Azusa N.²³,Daimon Hiroshi²³,Wakabayashi Yusuke⁴

Affiliation:

1. Institute for Solid State Physics, University of Tokyo, Japan

2. Graduate School of Materials Science, Nara Institute of Science and Technology, Japan

3. CREST, Japan Science and Technology Agency, Japan

4. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_513/_pdf

Reference22 articles.

1. [1] J. Derrien, J. Chevrier, V. Le Thanh, T. E. Crumbaker, J. Y. Natoli, and I. Berbezier, Appl. Surf. Sci. 70-71, 546 (1993).

2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

3. Electronic Properties of Semiconducting Silicides

4. Spin injection from Fe3Si into GaAs

5. [5] H. von Känel, R. Stalder, H. Sirringhaus, N. Onda, and J. Henz, Appl. Surf. Sci. 53, 196 (1991).

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