Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices
Author:
Affiliation:
1. Center for Innovative Integrated Electronic Systems (cies), Tohoku University,
2. Global Wafers Japan
3. Department of Mechanical, Electrical and Electronic Engineering, Interdisciplinary Gradate Science and Engineering, Shimane University
Publisher
Surface Science Society Japan
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology
Link
https://www.jstage.jst.go.jp/article/ejssnt/15/0/15_127/_pdf
Reference38 articles.
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3. Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)];e-Journal of Surface Science and Nanotechnology;2018-08-25
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