Adsorption mechanisms of In atoms onto the Si(111)-7* 7; Clustering and substitution for Si atoms-Reference-Cited by-同舟云学术

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Adsorption mechanisms of In atoms onto the Si(111)-7* 7; Clustering and substitution for Si atoms

Published:2005 Issue: Volume:3 Page:244-249
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Saito Mitsufumi¹,Sasaki Hirokazu¹,Mori Masayuki¹,Tambo Toyokazu¹,Tatsuyama Chiei¹

Affiliation:

1. Department of Electrical and Electronic Engineerting, Faculty of Engineerting, Toyama University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/3/0/3_0_244/_pdf

Reference17 articles.

1. Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy

2. Behavior of indium on the Si(111)7×7 surface at low-metal coverage

3. Electron energy loss measurements of In/Si(111) superstructures: Correlation of the spectra with surface superstructures

4. In overlayers on Si(111)7×7: Growth and evolution of the electronic structure

5. Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In and Si adatoms onSi(111)5×2-Au: Scanning tunneling microscopy and first-principles density functional calculations;Physical Review B;2009-09-30

2. Random and ordered arrays of surface magic clusters;International Reviews in Physical Chemistry;2008-04

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