Atomic-Layer Etching and Electron-Stimulated Desorption of Br-Chemisorbed Si(111) Surfaces.-Reference-Cited by-同舟云学术

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Atomic-Layer Etching and Electron-Stimulated Desorption of Br-Chemisorbed Si(111) Surfaces.

Published:2000 Issue:4 Volume:21 Page:232-238
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

MOCHIJI Kozo¹,ICHIKAWA Masakazu¹

Affiliation:

1. Joint Research Center for Atom Technology

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/21/4/21_4_232/_pdf

Reference17 articles.

1. Molecular layer etching of GaAs

2. Atomic Layer Controlled Digital Etching of Silicon

3. Electron-stimulated desorption of chlorine from GaAs(100) surfaces

4. ESD and ion angular distributions of positive and negative chlorine ions from the silicon (1 0 0)/chlorine interface

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effect of Low-Energy-Electron Irradiation to DNA Molecules;IEEJ Transactions on Electronics, Information and Systems;2007

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