Dependence of Mechanical Stress in Silicon Nitride Films on Conditions of Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Dependence of Mechanical Stress in Silicon Nitride Films on Conditions of Plasma-Enhanced Chemical Vapor Deposition

Published:2017-04 Issue:2 Volume:22 Page:138-146
ISSN:1561-5405
Container-title:Proceedings of Universities. ELECTRONICS
language:
Short-container-title:PofUE

Author:

Novak A.V., ,Novak V.R.,Dedkova A.A.,Gusev E.E., , ,

Publisher

National Research University of Electronic Technology (MIET)

Subject

General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of PECVD features of SiNx deposition processes on electrical parameters of SiNx/AlGaN/GaN structures;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2021-08-30

2. Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures;Modern Electronic Materials;2021-06-30

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