Dislocation-Induced Deviation of Phosphorus-Diffusion Profiles in Silicon-Reference-Cited by-同舟云学术

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Dislocation-Induced Deviation of Phosphorus-Diffusion Profiles in Silicon

Published:1966-11 Issue:6 Volume:10 Page:446-454
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Joshi M. L.,Dash S.

Publisher

IBM

Subject

General Computer Science

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase diagram study of the Si–P system in Si-rich region;Journal of Materials Research;2011-06-07

2. Theory of the screened Coulomb field generated by impurity ions in semiconductors;Physical Review B;2006-04-19

3. Dopants;Computational Microelectronics;2004

4. Penetration Depth of Diffusion-Induced Dislocations;Japanese Journal of Applied Physics;1983-07-20

5. The effect of strain‐induced band‐gap narrowing on high concentration phosphorus diffusion in silicon;Journal of Applied Physics;1979-02

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