The generation of three-dimensional bipolar transistor models for circuit analysis-Reference-Cited by-同舟云学术

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The generation of three-dimensional bipolar transistor models for circuit analysis

Published:1985-05 Issue:3 Volume:29 Page:252-262
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Chang F.-Y.,Wagner L. F.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5390243/05390247.pdf?arnumber=5390247

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs;IEEE Journal of Solid-State Circuits;1998

2. Transient analysis of diode switching circuits including charge storage effect;IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications;1996-03

3. A CAD procedure for optimizing bipolar devices relative to BiCMOS circuit delays;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1994-04

4. The peripheral bipolar junction transistor and its relation to predictability in device modeling;Solid-State Electronics;1993-01

5. Technology CAD at IBM;Technology CAD Systems;1993

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