Probing electrical transport, electron interference, and quantum size effects at surfaces with STM/STS-Reference-Cited by-同舟云学术

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Probing electrical transport, electron interference, and quantum size effects at surfaces with STM/STS

Published:1995-11 Issue:6 Volume:39 Page:603-616
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Avouris Ph.,Lyo I.-W.,Hasegawa Y.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5389462/05389464.pdf?arnumber=5389464

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Conductance of Si nanowires formed by breaking Si-Si junctions;Journal of Applied Physics;2007-12

3. Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor;Advanced Materials;2006-06-19

4. In-situ Voltage Tunneling Spectroscopy at Electrochemical Interfaces;The Journal of Physical Chemistry B;2005-03-11

5. Schottky diode characteristics of electrodeposited Au∕n-Si(111) nanocontacts;Applied Physics Letters;2004-10-18

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