Propagation of 1-µm Bubbles in Contiguous Disk Devices-Reference-Cited by-同舟云学术

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Propagation of 1-µm Bubbles in Contiguous Disk Devices

Published:1981-07 Issue:4 Volume:25 Page:295-302
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Ju K.,Hu H. L.,Hirko R. G.,Moore E. B.,Saiki D. Y.,Schwenker R. O.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5390646/05390653.pdf?arnumber=5390653

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New ion-implantation method for 4-µm period bubble device;IEEE Transactions on Magnetics;1984-07

2. High Curie temperature drive layer materials for ion‐implanted magnetic bubble devices;Journal of Applied Physics;1984-03-15

3. Design and characteristics of 4 µm period ion-implanted bubble devices with major line block replicate gate;IEEE Transactions on Magnetics;1983-09

4. The effect of ion implantation on epitaxial magnetic garnet thin films;Nuclear Instruments and Methods in Physics Research;1983-05

5. Preparation and properties of V‐substituted garnet films for ion‐implanted 1.0‐micron bubble devices with improved high‐temperature propagation;Journal of Applied Physics;1982-12

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