Affiliation:
1. [1] Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park, Maryland 20740, USA.
2. [2] Former Student, at Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, College Park, Maryland 20740, USA.
3. [3] On Semiconductor, 5005 East McDowell Rd, Phoenix, Arizona 85008, USA
Abstract
Abstract
Copper (Cu) wire bonding is now widely accepted as a replacement for gold (Au), however, its use in high reliability applications is limited due to early failures in high temperature and humid conditions. The Au to Cu wire transition is mainly driven by cost savings though there are other advantages to Cu such as better electrical and thermal conductivity, slower intermetallic compound (IMC) formation and reduced wire sweep during transfer molding. Some automotive, industrial and aerospace industries are still reluctant to adopt Cu wire bonded products due to perceived risks of wire and bond pad cracks, the potential for corrosion, and some lack of understanding about its reliability in harsh conditions.
A wire bond is considered good if destructive sampling qualification tests and periodic monitors pass for the batch. Tests include wire pull strength, wire bond shear, IMC coverage, and thickness of bond pad aluminum (Al) remaining beneath the bond. Nondestructive inspections also verify acceptable ball diameter and Al “splash”. This paper focuses on the bond shear test and its contribution to Cu ball bond reliability assessment, especially when changing Al bond pad thickness. A new revision of the JEDEC Wire Bond Shear Test Method, JESD22-B116B, has just been released, to include Cu wirebonds for the first time. It helps to clarify shear test failure modes for Cu ball bonds. However, there are still questions to be answered through research and experimentation, especially to learn the extent to which one may predict Cu ball bond reliability based on shear test results. Pad Al thickness is not considered in the current industry standards for shear test. Yet bond pad Al thickness varies widely among semiconductor products. This research is intended to contribute toward improved industry standards.
In this study, power and time bonding parameters along with bond pad thickness are studied for bond strength. Several wire bonds are created at different conditions, evaluated by optical microscope and SEM, IMC% coverage and bond shear strength. Similar bonding conditions are repeated for bond pads of 4um, 1um and 0.5um thickness.
Publisher
IMAPS - International Microelectronics Assembly and Packaging Society
Cited by
1 articles.
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1. Design and Development of Thickness Measuring System for Copper Wire;2023 5th International Conference on Smart Systems and Inventive Technology (ICSSIT);2023-01-23